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DEEP JUNCTION SOI MOSFET WITH ENHANCED EDGE BODY CONTACTS
DEEP JUNCTION SOI MOSFET WITH ENHANCED EDGE BODY CONTACTS
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机译:具有增强型边沿接触的深结SOI MOSFET
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摘要
A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the buried insulating regions under the source/drain junctions. A method of forming such a semiconductor structure is also described. The inventive method provides for self-alignment of the various features mentioned above with the gate conductor of the structure.
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