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TECHNIQUE FOR ENHANCING DOPANT ACTIVATION BY USING MULTIPLE SEQUENTIAL ADVANCED LASER/FLASH ANNEAL PROCESSES
TECHNIQUE FOR ENHANCING DOPANT ACTIVATION BY USING MULTIPLE SEQUENTIAL ADVANCED LASER/FLASH ANNEAL PROCESSES
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机译:通过使用多个顺序激光/闪光退火工艺来增强掺杂剂激活的技术
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摘要
By performing multiple radiation-based anneal processes on the basis of less critical process parameters, the overall risk for creating anneal-induced damage, such as melting of gate portions, may be substantially avoided while nevertheless the respective degree of dopant activation may be enhanced for each individual anneal process. Consequently, the sheet resistance of advanced transistor devices may be reduced with a decreasing number of sequential anneal processes.
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