Technique for increasing the dopant activation with the use of a plurality of sequential is more advanced laser / flash of light - baking processes

摘要

By carrying out of a plurality of radiation baking processes based on the basis of less critical process parameters, the overall probability for generating a damage caused by heating, for example the melting of gate regions, be substantially avoided, wherein, nevertheless, the corresponding degree of dopant activation for each individual annealing process is improved. Consequently, the layer resistance of modern transistor components with a stressful number of sequentially executed curing processes are reduced.