首页> 外国专利> MANUFACTURING METHOD OF CAPACITOR ELECTRODE, MANUFACTURING SYSTEM OF CAPACITOR ELECTRODE, AND STORAGE MEDIUM

MANUFACTURING METHOD OF CAPACITOR ELECTRODE, MANUFACTURING SYSTEM OF CAPACITOR ELECTRODE, AND STORAGE MEDIUM

机译:电容器电极的制造方法,电容器电极的制造系统和存储介质

摘要

A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film.
机译:一种通过去除基板表面上的氧化硅膜来制造电容器电极的方法,该方法包括:通过在控制温度的同时供应含卤素元素的气体以使其与氧化硅膜发生化学反应,将氧化硅膜转变成反应产物。衬底温度到第一处理温度;在将衬底的温度控制在高于第一处理温度的第二处理温度的同时,去除转化成反应产物的氧化硅膜。氧化硅膜是BPSG膜。

著录项

  • 公开/公告号US2008124936A1

    专利类型

  • 公开/公告日2008-05-29

    原文格式PDF

  • 申请/专利权人 EIICHI NISHIMURA;

    申请/专利号US20070946289

  • 发明设计人 EIICHI NISHIMURA;

    申请日2007-11-28

  • 分类号H01L21/302;

  • 国家 US

  • 入库时间 2022-08-21 20:14:04

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号