METHOD OF DEFECT DETECTION BASED ON WAFER ROTATION

摘要

A method of identifying defect generating process of a plurality of lots of wafers in a manufacturing environment is provided, wherein each lots of the wafers are divided into a plurality of sub lots of wafers, and dividing all processes into groups of manufacturing stages, the method comprises the steps of: assigning all the sub lots a reference orientation to be processed in a first group of manufacturing stages; rotating one or more of sub lots by designated combination of rotational angles with respect to the reference orientation during each of the subsequent group of manufacturing stages; detecting a defect pattern of the sub lots, wherein the defect pattern corresponds to a rotational combination associated with the designated combination of rotational angles of the sub lots and the number of the plurality of sub lots; and identifying the group of manufacturing stages corresponding to the rotational combination.