DETECTION OF DESIGN DEFECT ON WAFER AND PROCESS DEFECT, SCRUTINY OF DEFECT ON WAFER, SELECTION FOR USING ONE OR MORE FEATURE IN DESIGN AS PROCESS MONITORING FEATURE, AND SYSTEM AND METHOD FOR COMBINATION OF SOME OF THEM

摘要

PROBLEM TO BE SOLVED: To provide a system for detecting fine defect causing abnormality of a semiconductor device.SOLUTION: A system for detecting fine defect includes an electron beam scrutiny subsystem 10, and a computer subsystem 22. The computer subsystem 22 inspects a design 24, detects a defect in the design, compares the image of a die in the design printed on a wafer 12, obtained by the electron beam scrutiny subsystem 10, with the image of a die stored in a database 26, detects an additional defect in the design, determines the position on a wafer 12, the image of which is acquired by the electron beam scrutiny subsystem 10, based on the defect in the design, the additional defect in the design and the defect on the wafer 12 detected by a wafer inspection system 32, and detects a design defect and a process defect 36 at the position by using the image obtained at the position.