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Reconfigurable programmable logic device with P-channel non-volatile memory cells

机译:具有P通道非易失性存储单元的可重配置可编程逻辑器件

摘要

A system is disclosed for constructing a reconfigurable programmable logic device (PLD) comprising a first P-channel nonvolatile memory cell with a first source, a first drain and a first gate coupled to a first input node, a second P-channel nonvolatile memory cell with a second source, a second drain and a second gate coupled to a second input node, and an NMOS transistor with a third source and a third drain, wherein the first and second sources are commonly connected to a positive voltage supply (Vcc), the first, second and third drains are commonly connected to an output node and the third source is coupled to a complementary low voltage supply (Vss).
机译:公开了一种用于构造可重构可编程逻辑器件(PLD)的系统,该器件包括具有第一源极,第一漏极和耦合至第一输入节点的第一栅极的第一P沟道非易失性存储单元,第二P沟道非易失性存储单元。第二源极,第二漏极和第二栅极耦合至第二输入节点,以及具有第三源极和第三漏极的NMOS晶体管,其中第一和第二源极共同连接至正电源(Vcc),第一,第二和第三漏极共同连接到输出节点,并且第三源极耦合到互补的低压电源(Vss)。

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