首页>
外国专利>
SIMULATION APPARATUS AND SIMULATION METHOD USED TO DESIGN CHARACTERISTICS AND CIRCUITS OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
SIMULATION APPARATUS AND SIMULATION METHOD USED TO DESIGN CHARACTERISTICS AND CIRCUITS OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
展开▼
机译:用于半导体器件的设计特性和电路的仿真装置和仿真方法以及半导体器件的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a simulation apparatus including an input unit, storage unit, arithmetic unit, controller, and output unit. The input unit inputs a first potential at the source end, which corresponds to the gate end of a TFT, on that surface of a thin polysilicon film which faces the gate, a second potential at the source end on the back surface of the thin polysilicon film on which the gate is formed, a third potential at the drain end, which corresponds to the gate end of the TFT, on that surface of the thin polysilicon film which faces the gate, and a fourth potential at the drain end on the back surface of the thin polysilicon film. A drain current is calculated by performing an arithmetic operation on the basis of the first to fourth potentials, and a model is formed by including defect states.
展开▼