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SIMULATION APPARATUS AND SIMULATION METHOD USED TO DESIGN CHARACTERISTICS AND CIRCUITS OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FABRICATION METHOD

机译:用于半导体器件的设计特性和电路的仿真装置和仿真方法以及半导体器件的制造方法

摘要

A simulation apparatus and a simulation method used to design the characteristics and circuits of a semiconductor device, and a semiconductor device fabrication method are provided to optimize the characteristics of a transistor formed on a polycrystal silicon layer of an insulating substrate and a circuit including the transistor. A simulation apparatus used to design the characteristics and circuits of a semiconductor device includes an input device(11), a storage device(12), an operating device(16), a control device(15), and an output device(17). The input device inputs the device model formula of a transistor and the initial value of a device parameter. The storage device stores the device model formula, the initial value of the device parameter, and the voltage-current characteristic desired by the transistor. The operating device operates based on the initial value of the device parameter, calculates a first electric potential of a source area terminal adjacent to a gate electrode terminal, a second electric potential of the source area terminal, a third electric potential of a drain area terminal adjacent to the gate electrode terminal, and a fourth electric potential, and calculates drain current by substituting the first electric potential, the second electric potential, the third electric potential, and the fourth electric potential to the device model formula. The control device controls the input device, the storage device, and the operating device, compares the voltage-current characteristic desired by the transistor with the voltage-current characteristic based on the drain current, and controls to obtain a model parameter by changing the device parameter until the comparison result is smaller than an allowable error. The output device outputs the model parameter which is obtained by the operation of the operating device under the control of the control device.
机译:提供一种用于设计半导体器件的特性和电路的仿真装置和仿真方法,以及一种半导体器件制造方法,以优化形成在绝缘基板的多晶硅层上的晶体管和包括该晶体管的电路的特性。 。用于设计半导体器件的特性和电路的仿真设备包括输入设备(11),存储设备(12),操作设备(16),控制设备(15)和输出设备(17) 。输入设备输入晶体管的设备模型公式和设备参数的初始值。存储设备存储设备模型公式,设备参数的初始值以及晶体管所需的电压-电流特性。该操作设备基于设备参数的初始值进行操作,计算与栅电极端子相邻的源极区域端子的第一电势,源极区域端子的第二电势,漏极区域端子的第三电势栅极电极端子附近具有第四电位,并通过将第一电位,第二电位,第三电位和第四电位代入器件模型公式来计算漏极电流。控制设备控制输入设备,存储设备和操作设备,将晶体管所需的电压-电流特性与基于漏极电流的电压-电流特性进行比较,并通过改变设备来控制以获得模型参数参数,直到比较结果小于允许的误差为止。输出装置输出在控制装置的控制下通过操作装置的操作获得的模型参数。

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