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Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer
Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer
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机译:具有有源区的半导体发光器件,该有源区具有形成最下层和最上层的含铝层
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摘要
A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
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