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Inter-metal dielectric of semiconductor device and manufacturing method thereof including plasma treating a plasma enhanced fluorosilicate glass
Inter-metal dielectric of semiconductor device and manufacturing method thereof including plasma treating a plasma enhanced fluorosilicate glass
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机译:半导体器件的金属间电介质及其制造方法,包括等离子体处理等离子体增强的氟硅酸盐玻璃
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摘要
An exemplary manufacturing method of an inter-metal dielectric of a semiconductor device according to an embodiment of the present invention includes forming a first silicon-rich oxide (SRO) layer on a silicon substrate provided with or otherwise having a copper line layer therein, forming a plasma enhanced fluorosilicate glass (PEFSG) layer on the first SRO layer, plasma-treating the PEFSG layer, and forming a second SRO layer on the plasma-treated PEFSG layer. According to the present invention, the thickness of the second SRO layer of the inter-metal dielectric can be reduced. Consequently, process cost can be reduced, and the total thickness of the inter-metal dielectric can be reduced so as to lower the dielectric constant thereof, reduce the aspect ratio of any via holes that are subsequently formed in the inter-metal dielectric, and potentially increase the yield as a result of the reduced via hole aspect ratio.
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