Method and apparatus for a low noise JFET device on a standard CMOS process

摘要

A microelectric product and the method for manufacturing the product are provided. A source and drain are spaced from one another in a first direction and are connected to opposing ends of a channel to provide a set voltage. First and second gates are spaced from one another in a second direction surrounding a portion of the channel to allow for application and removal of a gate voltage. Application of the gate voltage repels majority carriers in the channel to reduce the current that conducts between the source and drain.