Memory device having a virtual ground array and methods using program algorithm to improve read margin loss

摘要

A program verification method for a memory device having a virtual array including a plurality of memory cells determines if leakage current passes through one or more neighboring memory cells to the programmed memory cell. The programmed memory cell is verified based on a first threshold state if leakage current is determined to pass through one or more neighboring memory cells. The programmed memory cell is verified based on a second threshold state if the leakage current is not determined to pass through one or more neighboring memory cells.