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Optimization of NMOS drivers using self-ballasting ESD protection technique in fully silicided CMOS process
Optimization of NMOS drivers using self-ballasting ESD protection technique in fully silicided CMOS process
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机译:在完全硅化的CMOS工艺中使用自镇流ESD保护技术优化NMOS驱动器
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摘要
Design and optimization of NMOS drivers using a self-ballasting ESD protection technique in a fully silicided CMOS process. Silicided NMOS fingers which include segmented drain diffusion. Specifically, the segmented drain diffusion provides self-ballasting resistors which improves the ESD performance. Preferably, the width of the each diffusion resistor is relatively small, as this can improve a non-uniform silicidation process. The resistance of the segmented diffusion resistors is determined by their width and length, and effectively increases the ballasting effect of parasitic n-p-n bipolar transistors.
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