METHOD AND SLURRY FOR TUNING LOW-K VERSUS COPPER REMOVAL RATES DURING CHEMICAL MECHANICAL POLISHING

摘要

METHOD AND SLURRY FOR TUNING LOW-K VERSUS COPPER REMOVAL RATES DURING CHEMICAL MECHANICAL POLISHING ABSTRACT OF THE DISCLOSUREA composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The compositioncontains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.Figure 2