METHOD AND SLURRY FOR TUNING LOW-K VERSUS COPPER REMOVAL RATES DURING CHEMICAL MECHANICAL POLISHING

摘要

The present invention describes a composition and associated method for chemical mechanical planarization of a metal substrate (CMP) on the semiconductor wafer. The compositions are non-ionic fluorocarbon surfactant and the (e.g., hydrogen peroxide) type of oxidizing agent (per-type) contains a. The composition and associated method are adjusted from low -k film removal rate with respect to the copper CMP is effective to control the film removal rate during low -k, copper, tantalum, and oxide film removal rate - provides the ability (tune-ability).