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Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing
Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing
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机译:化学机械抛光过程中调整低K与铜去除速率的方法和浆料
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摘要
A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.
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