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Producing optionally-doped coating of amorphous silicon, germanium or their oxides on metallic substrate, subjects area to oxidation before coating deposition

机译:在金属基材上产生可选掺杂的非晶硅,锗或它们的氧化物的涂层,在沉积涂层之前先对区域进行氧化

摘要

Locally in the substrate (2), and optionally before deposition of the coating (6), the nitrogen content is increased. In a novel procedure, before coating deposition, the surface (3) area is subjected to oxidation (4). Oxidation follows nitriding. Nitrogen content is increased by plasma-nitriding or plasma nitro-carburizing. Steam is used for oxidation. The coating is doped with carbon and/or nitrogen, at least over a fraction of the layer thickness (5). A concentration gradient of carbon and/or nitrogen is imposed in the coating. Pulsed discharge is used for coating deposition. The layer thickness is 1-25 mu m. Nitriding and/or oxidation are carried out to achieve a layer thickness (7) of 3-50 mu m. The coating is doped with at least one metallic element. It is doped with at least one further non-metallic element. Nitriding, oxidation and deposition of the coating are carried out in a single plant. An independent claim is included for corresponding processing equipment
机译:局部地在基材(2)中,并且任选地在沉积涂层(6)之前,增加氮含量。在新颖的过程中,在涂层沉积之前,对表面(3)区域进行氧化(4)。氮化后氧化。通过等离子渗氮或等离子硝基渗碳增加氮含量。蒸汽用于氧化。涂层至少在层厚度(5)的一部分上掺杂有碳和/或氮。在涂层中施加了碳和/或氮的浓度梯度。脉冲放电用于涂层沉积。层厚度为1-25μm。进行氮化和/或氧化以获得3-50μm的层厚度(7)。该涂层掺杂有至少一种金属元素。它掺杂有至少一种其他非金属元素。涂层的氮化,氧化和沉积是在单个工厂中进行的。相应处理设备包括独立索赔

著录项

  • 公开/公告号AT504482A4

    专利类型

  • 公开/公告日2008-06-15

    原文格式PDF

  • 申请/专利权人 RUEBIG GMBH & CO KG;

    申请/专利号AT20070000318

  • 发明设计人

    申请日2007-03-01

  • 分类号C23C16/02;C23C16/24;C23C16/40;

  • 国家 AT

  • 入库时间 2022-08-21 20:04:39

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