METHOD AND APPARATUS FOR LOW ENERGY ELECTRON ENHANCED ETCHING AND CLEANING OF SUBSTRATES

摘要

A method of low-damage, anisotropic etching and cleaning of substratesincluding mounting the substrate upon a mechanical suportlocated within the positive column of a plasma discharge generated by eitheran ac or dc plasma reactor. The mechanical support isindependent of the plasma reactor generating apparatus and capable of beingelectrically biased. The substrate is subjected to the positivecolumn, or electrically neutral portion, of a plasma of low-energy electronsand a species reactive with the substrate. An additional structurecapable of being electrically biased can be placed within the plasma tocontrol further the extraction or retardation of particles from theplasma.