STACKED NON-VOLATILE MEMORY WITH SILICON-CARBIGE-BASED AMORPHOUS-SILICON THIN-FILM TRANSISTORS AND MANUFACTURING METHOD THEREOF

摘要

A stacked non-volatile memory device uses amorphous silicon based thin film transistors (301) stacked vertically. Each layer of transistors or cells is formed from a deposited a-Si channel region layer (315) having a predetermined concentration of carbon to form a carbon rich silicon film or silicon carbide film, depending on the carbon content. The dielectric stack (310) is formed over the channel region layer. In one embodiment, the dielectric stack is an ONO structure. The control gate (311) is formed over the dielectric stack. This structure is repeated vertically to form the stacked structure. In one embodiment, the carbon content of the channel region layer is reduced for each subsequently formed layer. The thin film transistor can be a FinFET.