首页> 外国专利> METHOD FOR PRODUCING A CARRIER PLATE FOR A CIRCUIT, CARRIER PLATE PRODUCED ACCORDING TO SUCH A METHOD, AND CIRCUIT COMPRISING SUCH A CARRIER PLATE

METHOD FOR PRODUCING A CARRIER PLATE FOR A CIRCUIT, CARRIER PLATE PRODUCED ACCORDING TO SUCH A METHOD, AND CIRCUIT COMPRISING SUCH A CARRIER PLATE

机译:用于电路的承载板的制造方法,根据该方法生产的承载板以及包括该承载板的电路

摘要

The invention relates to the production of a carrier plate (1) for a circuit, to be equipped with at least one circuit component. First, a plurality of holes (4) is bored in the carrier plate (1). Then, a first metallic layer (6) is applied to the free surface of the carrier plate (1) and the inner walls of the holes (4). A filling material (7) is then inserted into the holes (4) and hardened. A second metallic layer (9) consisting of a more common metal than that of the first metallic layer (6) is applied to the first metallic layer (6) located on a side to be equipped. The second metal has a lower melting point than the first metal. The second metallic layer (9) is applied by submerging the carrier plate (1) into a chemical bath containing ions of the second metal. In order to form the second metallic layer (9), an upper layer of the first metallic layer (6) is replaced by the second metal. The invention also relates to a carrier plate produced in this way, and a circuit comprising such a carrier plate having an improved coplanarity compared to those of prior art.
机译:本发明涉及一种用于电路的承载板(1)的生产,该承载板配备有至少一个电路部件。首先,在承载板(1)上钻出多个孔(4)。然后,将第一金属层(6)施加到承载板(1)的自由表面和孔(4)的内壁。然后将填充材料(7)插入孔(4)中并硬化。由比第一金属层(6)的金属更普通的金属组成的第二金属层(9)被施加到位于要装备的一侧上的第一金属层(6)。第二金属的熔点低于第一金属的熔点。通过将承载板(1)浸入含有第二金属离子的化学浴中来涂覆第二金属层(9)。为了形成第二金属层(9),第一金属层(6)的上层被第二金属代替。本发明还涉及一种以此方式生产的承载板,以及包括这种承载板的电路,该电路与现有技术相比具有改善的共面性。

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