首页> 外国专利> A METHOD FOR DETERMINING A CRITICAL SIZE OF AN INCLUSION IN ALUMINUM OR ALUMINUM ALLOY SPUTTERING TARGET

A METHOD FOR DETERMINING A CRITICAL SIZE OF AN INCLUSION IN ALUMINUM OR ALUMINUM ALLOY SPUTTERING TARGET

机译:确定铝或铝合金溅射靶中夹杂物临界尺寸的方法

摘要

The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.
机译:本发明涉及一种用于确定Al或Al合金溅射靶(42)中的Al 2 O 3夹杂物(38)的直径的临界尺寸以防止其溅射过程中产生电弧的方法。该方法包括提供具有氩等离子体的溅射设备。在具有Al 2 O 3不含夹杂物的溅射表面的Al或Al合金溅射靶的选定溅射环境下的溅射期间,等离子体具有已知厚度的等离子体鞘。当对于选定的溅射环境已知护套的厚度时,可以基于护套的厚度确定Al 2 O 3夹杂物(38)的临界尺寸。更具体地,Al或Al合金溅射靶(42)中的Al 2 O 3夹杂物(38)的直径必须小于在选择的溅射环境下进行溅射期间的等离子体鞘的厚度,以抑制电弧。

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