Semiconductor laser diode with improved thermal characteristics and method for manufacturing the same

摘要

The present invention relates to a semiconductor laser diode has excellent thermal properties and its production method, n-GaAs substrate n- in the upper portion of the cladding layer, the active layer and the first cladding layer and is sequentially stacked; The first ridge has a rhombus shape in the upper cladding layer of p- (Ridge) 2 p- and the cladding layer of the structure, the both sides of the wrap around the first cladding layer 2 p- and n- is the current blocking layer is formed; And is with the upper surface of the second cladding layer, the cladding layer of the ridge structure 3 p- having a rhombus shape in the upper surface portion of the n- current blocking layer is formed; And is a p-GaAs cap layer formed on the first cladding layer 3 p-; The top surface of the n- current blocking layer, and both side surfaces of the first cladding layer 3 p-, and both sides are the p-GaAs and p-GaAs layer on the top surface of the cap layer is formed; By forming the p-GaAs layer on top of the p-GaAs p- metal layer having the same shape as the shape of the surface layer is formed, so that the n-GaAs layer is formed on the bottom of the n- metal substrate, a semiconductor Shortening the heat emitted from the vicinity of pass ridge of the laser diode to effectively dissipate heat generated is effective to improve the characteristics of the element.