ATOMIC LAYER DEPOSITION OF RUTHENIUM-CONTAINING FILMS USING SURFACE-ACTIVATING AGENTS AND SELECTED RUTHENIUM COMPLEXES

摘要

This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes using surface-activating agents, and to ruthenium complexes that can be used as ruthenium precursors in these processes.