A PHASE-CHANGE MEMORY UNIT, METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY UNIT, A PHASE-CHANGE MEMORY DEVICE HAVING THE PHASE-CHANGE MEMORY UNIT AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE

摘要

A phase-change memory unit, a method for manufacturing the same, a phase-change memory device having the same, and a method for manufacturing the same phase-change memory device are provided to form a phase-change material layer on a core forming layer by performing a chemical vapor deposition process. A first electrode(125) is formed on a substrate(100). An insulating structure includes an opening for exposing the first electrode. A core forming layer(140) is formed on the first electrode and a sidewall of the opening. A phase-change material layer(145) is formed on the core forming layer in order to fill up the opening. A second electrode(150) is formed on the phase-change material layer. A lower structure(105) is formed on the substrate. A lower insulating structure(110) is formed to cover the lower structure. A pad(120) is formed in the lower insulating structure in order to connect electrically the first electrode with the lower structure.