A LOW VOLTAGE FLEXIBLE ORGANIC THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A flexible organic TFT(thin film transistor) driven at a low voltage is provided to enable formation of a gate electrode by an economical roll-to-roll method using a metal thin film. A gate electrode is composed of a laminated metal layer. The metal layer is selected from a group of a tantalum, tungsten, titanium, molybdenum, aluminum, gold, copper, yttrium, zinc, hafnium, zirconium or an alloy thereof. The laminated metal layer is foil of aluminium or aluminum alloy. The laminated metal layer is a polished metal layer. The laminated metal layer is laminated on an adhesive layer on the substrate.