LOW-VOLTAGE ORGANIC THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an organic thin film transistor capable of low voltage operation and commercialization with ease by forming a gate insulating film having a thickness of a few nanometers, while forming it on a plastic substrate, a glass substrate, etc. in a low-temperature process.;SOLUTION: A metal is patterned on a substrate and vapor-deposited to form a gate electrode 12, and then the gate electrode 12 is directly oxidized at a normal temperature to 100°C in O₂ plasma process to grow a metal oxide film having a thickness of 10 nm or less, thereby the gate insulating film 13 is formed along the surface of the gate electrode. Then an organic semiconductor film 14 is vapor-deposited on the gate insulating film 13, and source/drain electrodes 15/16 are formed on the organic semiconductor film 14 with a certain distance from each other. When forming a double gate insulating film, an organic insulating film is formed on the metal oxide film in a self-assembly process or a spin coating process.;COPYRIGHT: (C)2008,JPO&INPIT