A method for manufacturing an ultraviolet detection device is provided to achieve massive production simultaneously at a short time by irradiating an electron beam and a proton beam to form an insulating layer on a p-n junction surface. A semiconductor substrate is prepared, wherein a buffer GaN layer(12), an n type GaN semiconductor layer(13) and a p type GaN semiconductor layer(14) are formed in turn on a sapphire substrate(11). The n type GaN semiconductor layer is exposed by performing etching process after patterning the p type GaN semiconductor layer. An insulating layer(15) is formed on a p-n junction surface by irradiating an electron beam or a proton beam which passes through a hard mask to the p type GaN semiconductor layer. The insulating layer is optimized by annealing. A transparent electrode and an electrode pad are formed to a cell at which the electro beam or the proton beam is irradiated.
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