PLASMA PROCESSING SYSTEM, PLASMA PROCESSING METHOD, PLASMA FILM DEPOSITION SYSTEM, AND PLASMA FILM DEPOSITION METHOD

摘要

Antenna (11a) and the second antenna (11b) are arranged to position on the outside of the top face of the surrounding, the current flowing in a direction opposite to the direction of current supplied to the antenna (11a) by the power supply means to the second antenna (11b) supply, and the second antenna (11b) parts, discloses a magnetic line of force (F2) plasma film deposition apparatus (plasma processing apparatus) for generating a line of magnetic force heading in a direction opposite to the direction for (F1), that appears in the antenna (11a) region. Therefore, even as to generate a uniform plasma over a wide range within the tubular container (2) to reduce the magnetic flux density in the direction of the wall surface. ; Plasma processing device