PLASMA PROCESSING SYSTEM, PLASMA PROCESSING METHOD, PLASMA FILM DEPOSITION SYSTEM, AND PLASMA FILM DEPOSITION METHOD

摘要

A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.