FABRICATING METHOD OF VERTICAL EXTENDED CAVITY SURFACE EMITTING LASER AND VERTICAL EXTENDED CAVITY SURFACE EMITTING LASER USING THE SAME

摘要

A method for manufacturing an optical source of a vertical surface emitting laser and a vertical extended cavity surface emitting laser using the same are provided to minimize an optical loss and a resistance of a laser source by gradually increasing doping quantity in a p-DBR mirror. A vertical extended cavity surface emitting laser includes a pumping semiconductor chip(110) and an external mirror(111). The pumping semiconductor chip includes a p-DBR(Distributed Bragg Reflector) mirror, an activation layer, an n-DBR mirror, and an n-sub layer. The p-DBR mirror is doped, so that the doping quantity is gradually increased therein. The activation layer is grown on the p-DBR mirror. The n-DBR mirror is formed on the activation layer. The n-sub layer is grown on the n-DBR mirror. The external mirror oscillates and outputs the beam from the pumping semiconductor chip to a laser beam. The pumping semiconductor chip is attached on an upper surface of a heat sink.