Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with LowThreshold Current Density Fabricated Using a Simple Chemical Etch Process

摘要

We have demonstrated threshold current densities below 800 A/sq cm in large-diameter (75 micrometers < d< 150 micrometers vertical-cavity surface-emitting lasers fabricated from an epitaxial structure containing a single In(0.2)Ga(0.8)As quantum well in a one-wavelength-long Fabry-Perot resonant cavity. The fabrication process uses a circular Au/Cr/Au disk as both the p-type contact and the mask for chemically etching individual diodes.