首页> 外国专利> SEMICONDUCTOR INTEGRATED CIRCUIT WITH ELECTROSTATIC ACTUATOR DRIVING CIRCUIT, MEMS, AND METHOD FOR DRIVING ELECTROSTATIC ACTUATOR

SEMICONDUCTOR INTEGRATED CIRCUIT WITH ELECTROSTATIC ACTUATOR DRIVING CIRCUIT, MEMS, AND METHOD FOR DRIVING ELECTROSTATIC ACTUATOR

机译:具有静电驱动器的半导体集成电路驱动电路,微机电系统以及驱动静电执行器的方法

摘要

A semiconductor integrated circuit, electrostatic actuators, detection circuit, and a memory circuit, and a bias circuit. It said electrostatic actuators are disposed between the insulating layer has an upper electrode, lower electrode, the upper electrode and the lower electrode. The detection circuit detects the amount of charge accumulated in the insulating film of the electrostatic actuator. It said memory circuit, and stores the detection result of the charge amount detected by the detection circuit. The bias circuit is, on the basis of the detection result stored in the storage circuit, thereby changing the drive voltage for driving the electrostatic actuators. ; The electrostatic actuator, an upper electrode, lower electrode, dielectric film, the charge accumulation amount detecting circuit, the pull-out voltage
机译:半导体集成电路,静电致动器,检测电路,存储电路以及偏置电路。所述静电致动器设置在具有上电极,下电极,上电极和下电极的绝缘层之间。检测电路检测在静电致动器的绝缘膜中累积的电荷量。所述存储电路存储由检测电路检测出的电荷量的检测结果。偏置电路基于存储在存储电路中的检测结果,从而改变用于驱动静电致动器的驱动电压。 ;静电致动器,上部电极,下部电极,电介质膜,电荷蓄积量检测电路,引出电压

著录项

  • 公开/公告号KR100836980B1

    专利类型

  • 公开/公告日2008-06-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070013214

  • 申请日2007-02-08

  • 分类号H01L27/02;H01L27;

  • 国家 KR

  • 入库时间 2022-08-21 19:52:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号