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MANUFACTURING METHOD OF LOW-K THIN FILMS AND AFTER ANNEALING PROCESSES USING RTA, LOW-K THIN FILMS MANUFACTURED THEREFROM
MANUFACTURING METHOD OF LOW-K THIN FILMS AND AFTER ANNEALING PROCESSES USING RTA, LOW-K THIN FILMS MANUFACTURED THEREFROM
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机译:低介电常数薄膜的制造方法及使用RTA的退火工艺后,由其制得的低介电常数薄膜
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摘要
Plasma polymerized low-k thin films with considerably low dielectric constant values are provided, and treatment methods are provided to improve dielectric constants and mechanical strengths of the low-k thin films. A manufacturing method of a low-k thin film comprises the steps of: depositing a plasma polymerized thin film onto a substrate(1) by a plasma enhanced chemical vapor deposition process using a polymer precursor material; and performing a post-heat treatment at a temperature of 300 to 550 deg.C and a pressure of 0.5 to 1.5 atmospheric pressure in a gas atmosphere containing oxygen gas or nitrogen gas for 1 to 5 minutes by using an RTA(Rapid Thermal Annealing) apparatus. The polymer precursor material is decamethylcyclopentasiloxane or cyclohexane. The step of performing the post-heat treatment comprises injecting the substrate into a chamber(70) of the RTA apparatus, and generating heat relative to the substrate by using a plurality of halogen lamps(80) disposed within the chamber.
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