Flat Panel Display Device using the directinal crystallization, The fabricating method of Electro Luminecence Display Device using directinal crystallization, semiconductor and The fabricating method of semiconductor using directinal crystallization

摘要

A flat panel display device using a directional crystallization method, a method for manufacturing the same, a semiconductor, and a method for manufacturing the same are provided to manufacture excellent poly crystal silicon by forming a less surface roughness. A substrate(101) has a pixel section(105) and a peripheral section(107). A buffer layer(102) is located on the substrate. A poly crystal silicon layer of the pixel section is located on the buffer layer. The poly crystal silicon layer includes a residual metal of less than 10^13 atom/cm^3. A poly crystal silicon layer(109) of the peripheral section is located on the buffer layer. The poly crystal silicon layer of the peripheral section is comprised of grain boundaries located toward a direction in parallel with a crystal growing direction. Surface roughness of the poly crystal silicon layer of the peripheral section is less than 15 nm. Gate electrodes are respectively located to correspond to a region of the poly crystal silicon layer of the pixel section and the peripheral section. A gate dielectric insulates the poly crystal silicon layer and the gate electrode. Source/drain electrodes are connected to a part of the poly crystal silicon layer of the pixel section and the peripheral section. The pixel section includes a first electrode, an organic light emitting layer, and a second electrode.