Growing single crystals of sapphire use of seed material technical quality

摘要

A method of growing single crystals of sapphire from a melt, comprising preparing, loading, melting the charge in vacuo inoculated Extruding chip and heat removal by reducing the power of the heating element and the cooling liquid, characterized in that the capacity of the crystal produced in the technical quality of the seed, 6 category, containing gas inclusion size and 500 microns and their clusters by slowly seeding 10 mm every 10-12 min before contact with the melt temperature of 2330 K, and not eyuschim crystallization nuclei on the surface, dipping a seed in the melt with 20-30 10-15 mm, lower power heater to obtain supercooling of the melt required for the nucleation of grains on the surface of crystallization seed at escalating constrictions, and forming a convex conical front of crystallization in the melt.