A method for the operation of a batch - trapping - memory cell

摘要

A method for the operation of a batch - trapping - memory cell with the source (s), drain (d) and the channel region (c), wherein the source side or on the drain side a bit is programmed in that hot charge carriers from the channel region (c) in a between a lower boundary layer (2) and an upper boundary layer (4) the storage layer (3) arranged to be trapped, characterized in that for erasing the memory cell in each case is connected to the source (s) or on the drain (d) and to a gate - electrode (5) electrical potentials are applied, so that the charge carriers of the upper confinement layer (4) by tunneling and thus from the storage layer (3) are removed.