A process for the preparation of a gate contact structure of a trench - high power transistor, and to this method is high power transistor

摘要

A process for producing a gate contact structure during the production of a trench high power transistor, comprises preparing a semiconductor substrate, forming a trench in the substrate, precipitating a gate dielectric (1) onto the inner walls of the trench, and precipitating a field oxide. The gate oxide is precipitated followed by a gate material (3). The gate material is then polyrecess etched. The liner (4) is then precipitated, and the liner and the intermediate oxide (5) are selectively etched. The liner consists of silicon nitride or oxynitride.