Boron nitride - thin layer of the emitter and method for production thereof and electrons emission method of using a boron nitride - thin layer emitter

摘要

Boron nitride - thin layer emitter is connected with an exceptional electrons emission, of the crystals, which in each case by a general formula bn are shown, in each case sp³-bound boron nitride, sp²-bound boron nitride or a mixture thereof and in each case have a shape with pointed ends of an exceptional field emission electrons which have assumed, wherein the crystals are distributed aggregated and in such a way that they have a structure that a two-dimensional self similar fractal.