BORON NITRIDE THIN FILM EMITTER AND PRODUCTION METHOD THEREFOR, AND ELECTRON EMISSION METHOD USING BORON NITRIDE THIN FILM EMITTER

摘要

The invention field electron emission property is excellent, by in the boron nitride thin film, which end comprises a boron nitride crystal of the pointed shape, emitter design by the thin film, properly the distribution of the determined control, field emission this provides a low threshold, efficiency is good emitter. Appears by formula BN, sp ³ in the binding, sp2 bonding boron nitride, or a mixture design of the boron nitride thin film yimi teo comprises and includes the decision for the excellent shape tip is pointed electron emissive the and when the already precipitated by the emitter of the reaction from the gas phase, by controlling the angle of the substrate relative to the flow of the reaction gases, controlling the distribution of the crystal in the thin film surface.