首页> 外文会议>Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International >Sputtered thin film boron nitride cold emitters on metal substrates
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Sputtered thin film boron nitride cold emitters on metal substrates

机译:在金属基板上溅射薄膜氮化硼冷发射器

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Carbon-doped BN films of about 100 nm thickness were deposited by reactive magnetron sputtering on "smooth" and beadblasted Mo and Nb substrates. Electron emission, at a given extraction voltage, is orders of magnitude larger from the BN coated surfaces. Emission from the beadblasted surfaces is enhanced over emission from the smooth surfaces due to increased field emission from the beadblasted-induced surface protrusions. With a 0.5 mm diameter extraction electrode, current densities of 0.35 A/cm/sup 2/ were obtained. Emission stays constant to pressures of about 1/spl times/10/sup -4/ Torr.
机译:通过反应磁控溅射将厚度约为100 nm的碳掺杂BN膜沉积在“光滑的”和珠光处理的Mo和Nb衬底上。在给定的提取电压下,电子发射比BN涂层表面大几个数量级。由于来自喷丸处理的表面突起的场发射增加,因此从喷丸处理的表面的发射与从光滑表面的发射相比得到增强。使用0.5mm直径的引出电极,获得0.35A / cm / sup 2 /的电流密度。排放在大约1 / spl乘以/ 10 / sup -4 / Torr的压力下保持恒定。

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