Semiconductor device, has trench with side wall-isolation extending from main surface deeply into semiconductor substrate and comprising conductive material extending from main surface to substrate layer

摘要

The device has a control gate (13) arranged on a main surface (1) over an insulating layer. A drain region (15) is provided in the main surface. A source region (6) is formed in a trough region (4), which is formed in the main surface of a semiconductor substrate (2). A metallization layer (19) is arranged on the main surface. A trench (9) with side wall-isolation (10) extends from the main surface deeply into the semiconductor substrate. The trench has conductive material (8) extending from the main surface to a substrate layer (11).