Power semiconductor module operating method, involves carrying out switching operation phase for switching component between conducting and locking conditions, and injecting electrons into dielectric during injection operation phase

摘要

The method involves providing a power semiconductor module comprising a semiconductor component i.e. integrated-gate bipolar transistor, and a semiconductor body (50), where the component is controlled by field effect over a control connection (13). The semiconductor is electrically insulated against the control connection by using a gate-dielectric (5), and a switching operation phase is carried out for switching the component alternatively between a conducting condition and a locking condition. Electrons are injected into the dielectric during an injection operation phase. An independent claim is also included for a power semiconductor module comprising a semiconductor component and a semiconductor body.