Semiconductor device with a multi-layered interconnecting structure, useful for highly integrated semiconductor circuits, comprises an UV-light blocking film, a porous insulating film and a connecting layer

摘要

Semiconductor device with a multi-layered interconnecting structure, comprises an UV-light blocking film, a porous insulating film and a connecting layer, where the UV-light blocking film is formed using a material for instructing an UV-light of blocking film comprising silicon compounds. Semiconductor device with a multi-layered interconnecting structure, comprises an UV-light blocking film, a porous insulating film and a connecting layer, where the UV-light blocking film is formed using a material for forming an UV-light blocking film comprising a silicon compound (A) of formula (-(Si(R 1)(R 2)-CH 2) n-) and (-(Si(R 1)(R 2)-N(R 3)) n-), where in (A) at least one of R 1or R 2is substituted by a substituent such that the UV light is absorbed, where the substituent is vinyl-, acryl-, benzyl-, phenyl-, carbonyl-, carboxyl-, diazo-, azide-, cinnamoyl-, acrylate-, cinnamylidene-, cyanocinnamylidene-, furylpentadiene- or p-phenylene diacrylate group. R 1-R 3alkyl group, alkenyl group, cycloalkyl group, aryl group (all optionally substituted) or H; and n : greater than or equal to 2. An independent claim is included for a procedure for the production of the semiconductor device comprising forming the multi-layered interconnecting structure, forming the UV-light blocking film, forming a porous insulating film on the exposed light blocking film; hardening the porous insulating film by irradiating with an UV-light, and forming a connection.