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A structure and method for forming an inter-poly dielectric in a shielded gate field effect transistor
A structure and method for forming an inter-poly dielectric in a shielded gate field effect transistor
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机译:在屏蔽栅场效应晶体管中形成多晶硅间电介质的结构和方法
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摘要
A field effect transistor (FET) includes a trench extending into a silicon region of a first conductive type. A shield insulated from the silicon region by a shield dielectric extends in a lower portion of the trench. A gate electrode is in the trench over but insulated from the shield electrode by an inter-poly dielectric (IPD). The IPD comprises a conformal layer of dielectric and a thermal oxide layer.
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