Charge pump for a non-volatile storage with read-only resolution in the presence of address slopes, and non-volatile storage with such a charge pump

摘要

Described herein is a charge pump (12') for a nonvolatile memory (1'), comprising a clock generator circuit (22') supplying an output clock signal (CK); a phase generator circuit (24) receiving the output clock signal (CK), and supplying phase signals (A, B, C, D); and a voltage booster circuit (16) receiving a supply voltage (VCC) supplied from outside to the nonvolatile memory (1') and the aforesaid phase signals (A, B, C, D), and supplying a read voltage (VREAD) higher than the supply voltage (VCC). The clock generator circuit (22') comprises a comparator (40) receiving the read voltage (VREAD) and a reference voltage (VREF1), and supplying a selection signal (SEL) indicating the outcome of the comparison between said voltages; and a multiplexer (42) receiving a first input clock signal (CKP) having a pre-set frequency, a second input clock signal (CKATD) having a frequency correlated to the transition frequency of the addresses (ADD) supplied to the nonvolatile memory (1'), and the selection signal (SEL), and supplying the aforesaid output clock signal (CK). IMAGE