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Semiconductor non-volatile memory, charge storage method of a semiconductor non-volatile memory, and the charge storage program
Semiconductor non-volatile memory, charge storage method of a semiconductor non-volatile memory, and the charge storage program
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机译:半导体非易失性存储器,半导体非易失性存储器的电荷存储方法以及电荷存储程序
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摘要
There is provided a semiconductor non-volatile memory including: plural memory sections, a voltage application section, and a control section that controls the voltage application section wherein the control section controlling voltage application such that, based on a value of current detected by a current detection section, in a region where the current flowing in a channel region is greater than a predetermined target value at which a amount of charge accumulated has become a specific value in at least one of a first charge accumulating section or a second charge accumulating section, when a value of current flowing in the channel region approaches a target value, a rate of increase in the charge accumulating amount per time is decreased at least once.
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