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System and method for buried electrical bushings in a glass - silicon - mems - process

机译:在玻璃-硅-记忆体-工艺中掩埋电气套管的系统和方法

摘要

A method for providing conductive paths into a hermetically sealed cavity (84) is described. The sealed cavity is formed utilizing a silicon-glass micro­ electromechanical structure (MEMS) process and the method includes forming recesses (82) on a glass substrate (80) everywhere that a conductive path is to pass into the cavity, and forming conductive leads (86) in and around the recesses. A glass layer (92) is deposited over the substrate, into the recesses, and over the conductive leads and then planed to expose portions (88) of the conductive leads. A sealing surface (94) is formed on at least a portion of the glass layer. Silicon is then bonded (154) to the sealing surface of the planarized glass layer, the wafer (120) being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
机译:描述了一种用于将导电路径提供到气密的空腔(84)中的方法。密封腔体是利用硅玻璃微机电结构(MEMS)工艺形成的,并且该方法包括在玻璃基板(80)上每一个导电路径都要进入该腔体的地方形成凹槽(82),以及形成导电引线( 86)。将玻璃层(92)沉积在基板上,凹进中以及导电引线上方,然后将其平面化以暴露导电引线的部分(88)。在玻璃层的至少一部分上形成有密封面(94)。然后将硅粘结(154)到平坦化玻璃层的密封表面,配置晶片(120),使得每根引线的一部分在密封腔内,而每根引线的一部分在密封腔外。

著录项

  • 公开/公告号DE602004006094T2

    专利类型

  • 公开/公告日2008-01-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20046006094T

  • 发明设计人

    申请日2004-03-10

  • 分类号B81C1/00;B81B7/00;

  • 国家 DE

  • 入库时间 2022-08-21 19:48:19

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