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System and method for buried electrical bushings in a glass - silicon - mems - process
System and method for buried electrical bushings in a glass - silicon - mems - process
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机译:在玻璃-硅-记忆体-工艺中掩埋电气套管的系统和方法
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摘要
A method for providing conductive paths into a hermetically sealed cavity (84) is described. The sealed cavity is formed utilizing a silicon-glass micro electromechanical structure (MEMS) process and the method includes forming recesses (82) on a glass substrate (80) everywhere that a conductive path is to pass into the cavity, and forming conductive leads (86) in and around the recesses. A glass layer (92) is deposited over the substrate, into the recesses, and over the conductive leads and then planed to expose portions (88) of the conductive leads. A sealing surface (94) is formed on at least a portion of the glass layer. Silicon is then bonded (154) to the sealing surface of the planarized glass layer, the wafer (120) being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.
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