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because, totally impoverished triple a soi structure, and various methods for the production and function of the same
because, totally impoverished triple a soi structure, and various methods for the production and function of the same
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机译:因为,完全贫困的三层soi结构及其生产和功能的各种方法
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摘要
In one example, a method of forming a transistor above a silicon-on-insulator substrate comprised of a bulk substrate, a buried oxide layer and an active layer, the bulk substrate being doped with a first type of dopant material is disclosed. The method comprises performing a first ion implant process using a dopant material that is of a type opposite the first type of dopant material to form a first well region within the bulk substrate, performing a second ion implant process using a dopant material that is the same type as the first type of dopant material to form a second well region in the bulk substrate within the first well, the transistor being formed in the active layer above the second well, forming a conductive contact to the first well and forming a conductive contact to the second well.
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