A process for the use of hydrogen - and oxygen gas in sputter deposition of aluminum-containing films and then aluminium films produced

摘要

Aluminum-containing films (134) include an oxygen content within the films. The aluminum-containing films are formed by introducing hydrogen gas with argon or hydrogen gas/oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate (122). The aluminum-containing films so formed are hillock-free and have low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.